| PART |
Description |
Maker |
| K6R1016V1D K6R1016V1D-JI080 K6R1016V1D-UI080 |
64K X 16 STANDARD SRAM, 8 ns, PDSO44
IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
|
samsung
|
| IS61LV6416 |
IC,SRAM,64KX16,CMOS,BGA,48PIN,PLASTIC
|
issi
|
| N01L1618N1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| BS616LV1011 BS616LV1011EIP70 BS616LV1011AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IS61C6416 IS61C6416-10K IS61C6416-10T IS61C6416-12 |
64K x 16 HIGH-SPEED CMOS STATIC RAM
IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
ETC[ETC]
ISSI[Integrated Silicon Solution, Inc]
|
| BS616LV1016 |
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconductor
|
| BS616LV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
| K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JC |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
